smd type transistors 1 www.kexin.com.cn silicon npn epitaxial planer type 2SD2459 features high collector to emitter voltage v ceo . low collector to emitter saturation voltage v ce(sat) . absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 150 v collector to emitter voltage v ceo 150 v emitter to base voltage v ebo 5v peak collector current i cp 1.5 a collector current i c 1a collector power dissipation p c *1w junction temperature t j 150 storage temperature t stg -55to+150 * printed circuit board: copper foil area of 1cm 2 or more, and the board thickness of 1.7mm for the collector portion
2 smd type transistors www.kexin.com.cn h fe classification marking 2er 2es rank r s hfe 120 240 170 340 2SD2459 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =75v,i e =0 0.1 a collector to base voltage v cbo i c =10a,i e = 0 150 v collector to emitter voltage v ceo i c =1ma,i b = 0 150 v emitter to base voltage v ebo i e = 10a, i c =0 5 v v ce =2v,i c = 100ma 120 340 v ce =2v,i c =500ma 40 collector to emitter saturation voltage v ce(sat )i c =500ma,i b = 25ma* 0.11 0.3 v base to emitter saturation voltage v be(sat) i c =500ma,i b = 25ma* 0.8 1.2 v transition frequency f t v cb = 10v, i e = -50ma, f = 200mhz 90 mhz collector output capacitance c ob v cb =10v,i e = 0, f = 1mhz 12 20 pf * pulse measurement forward current transfer ratio h fe
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